MC74HCT259A datasheet(3/9 Pages) ONSEMI

Part #	MC74HCT259A

Description	High?뭁erformance Silicon?묰ate CMOS

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MC74HCT259A

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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VCC

V

Guaranteed Limit

Unit

− 55 to

25°C

v 85°C

v 125°C

VIH

Minimum High−Level Input

Voltage

Vout = 0.1 V or VCC − 0.1 V

|Iout| v 20 mA

4.5

5.5

2.0

V

VIL

Maximum Low−Level Input

Voltage

Vout = 0.1 V or VCC − 0.1 V

|Iout| v 20 mA

4.5

5.5

0.8

V

VOH

Minimum High−Level Output

Voltage

Vin = VIH or VIL

|Iout| v 20 mA

4.5

5.5

4.4

5.4

4.4

5.4

4.4

5.4

V

Vin = VIH or VIL

|Iout| v 5.2 mA

4.5

3.98

3.84

3.70

VOL

Maximum Low−Level Output

Voltage

Vin = VIH or VIL

|Iout| v 20 mA

4.5

5.5

0.1

V

Vin = VIH or VIL

|Iout| v 5.2 mA

4.5

0.26

0.33

0.40

Iin

Maximum Input Leakage

Current

Vin = VCC or GND

5.5

± 0.1

± 1.0

mA

ICC

Maximum Quiescent Supply

Current (per Package)

Vin = VCC or GND

Iout = 0 mA

5.5

4

40

160

mA

DICC

Additional Quiescent Supply

Current

Vin = 2.4V, Any One Input

Vin = VCC or GND, Other Inputs

Iout = 0mA

5.5

≥ −55°C

25 to 125°C

mA

2.9

2.4

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