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V20100R Datasheet(PDF) 2 Page - Vishay Siliconix |
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V20100R Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page V20100R www.vishay.com Vishay General Semiconductor Revision: 17-Aug-15 2 Document Number: 89194 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 100 (minimum) - V Instantaneous forward voltage per diode IF = 5 A TA = 25 °C VF (1) 0.62 - V IF = 10 A 0.81 0.90 IF = 5 A TA = 125 °C 0.54 - IF = 10 A 0.65 0.72 Reverse current per diode VR = 70 V TA = 25 °C IR (2) 4- μA TA = 125 °C 4 - mA VR = 100 V TA = 25 °C - 150 μA TA = 125 °C 5.6 15 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20100R UNIT Typical thermal resistance per diode RJC 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20100R-M3/4W 1.88 4W 50/tube Tube Case Temperature (°C) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 Resistive or Inductive Load Mounted on specific Heatsink V20100R 0 2 4 6 8 10 0246 10 12 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 8 D = t p/T t p T |
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