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KAF-50100-AAA-JD-AE Datasheet(PDF) 3 Page - ON Semiconductor |
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KAF-50100-AAA-JD-AE Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 25 page  KAF−50100 www.onsemi.com 3 DEVICE DESCRIPTION Architecture Figure 2. Block Diagram 29 Dark Pixels 28 26 1 Test Row 4 4 4088 VOUT LA VSUB OG L H1L L RG L RD L V1 V2 FDG PFG 16 VDD LA VSS L 4 Blue + 12 Buffer Pixels 16 16 16 28 H1A R LOD 4 4 28 4088 4 1 4 10 1 16 4 1 4 10 1 4088 16 28 4088 4 1 4 10 1 16 4 1 4 10 1 VOUT LB VDD LB VOUT RA OG R H1L R RG R RD R VDD RA VSS R VOUT RB VDD RB H2 R H1B R H1A L H1B L H2 L (Last VCCD Phase = V2) VSUB V1 V2 FDG PFG LOD XG KAF−50100 8176 (H) × 6132 (V) 6.0 × 6.0 mm Pixels 28 28 4152 Pixels/Line/Output NOTE: Showing the filter pattern of the color version. Dark Reference Pixels Surrounding the periphery of the device is a border of light shielded pixels creating a dark region. Within this dark region are light shielded pixels that include 28 leading dark pixels on every line. There are also 29 full dark lines at the start and 26 full dark lines at the end of every frame. Under normal circumstances, these pixels do not respond to light and may be used as a dark reference. Dummy Pixels Within each horizontal shift register there are 20 leading pixels. These are designated as dummy pixels and should not be used to determine a dark reference level. Active Buffer Pixels Forming the outer boundary of the effective active pixel region, there are 16 unshielded active buffer pixels between the photoactive area and the dark reference. These pixels are light sensitive but they are not tested for defects and non-uniformities. For the leading 16 active column pixels, the first 4 pixels are covered with blue pigment while the remaining are arranged in a Bayer pattern (R, GR, GB, B). The filter description is for the color version only. No filter pattern is provided for the monochrome version. CTE Monitor Pixels Two CTE test columns, at the leading end of each output, and one CTE test row are included for manufacturing test purposes. The filter description is for the color version only. No filter pattern is provided for the monochrome version. Image Acquisition An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs (charge) within the device. These photon-induced electrons are collected locally by the formation of potential wells at each pixel site. The number of electrons collected is linearly dependent on light level and exposure time and non-linearly dependent on wavelength. When the pixel’s capacity is reached, excess electrons are discharged into the lateral overflow drain (LOD) to prevent crosstalk or ‘blooming’. During the integration period, the V1 and V2 register clocks are held at a constant (low) level. |
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Similar Description - KAF-50100-AAA-JD-AE |
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