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SSF1221J2 Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSF1221J2 Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 5 page  SSF1221J2 12V P-Channel MOSFET www.goodark.com Page 2 of 5 Rev.1.1 Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage -12 — — V VGS = 0V, ID = 250μA — 14.4 16 VGS =-4.5V, ID =-10A — 18.9 21 VGS =-2.5V, ID =-8.9A RDS(on) Static Drain-to-Source on-resistance — 26.4 38 mΩ VGS =-1.8V, ID =-4.5A VGS(th) Gate threshold voltage -0.4 — -1 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — -1 μA VDS = -12V,VGS = 0V — — 100 VGS = 8V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -8V gFS Forward Transconductance -3 — — S VDS = -5V, ID =-10A Qg Total gate charge — 21 — Qgs Gate-to-Source charge — 2.5 — Qgd Gate-to-Drain("Miller") charge — 6 — nC ID = -10A, VDD=-6V, VGS = -4.5V td(on) Turn-on delay time — 30 — tr Rise time — 48 — td(off) Turn-Off delay time — 97 — tf Fall time — 65 — ns VGS=-4.5V, VDD=-6V, ID = -10A, RGEN=6Ω Ciss Input capacitance — 2138 — Coss Output capacitance — 685 — Crss Reverse transfer capacitance — 650 — pF VGS = 0V VDS = -6V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -12 A ISM Pulsed Source Current (Body Diode) — — -28 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — -0.77 -1.2 V IS=-2A, VGS=0V trr Reverse Recovery Time — 16 — ns Qrr Reverse Recovery Charge — 5.9 — uC TJ = 25°C, IF =-10A, di/dt = 100A/μs |
Similar Part No. - SSF1221J2_15 |
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Similar Description - SSF1221J2_15 |
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