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MBR4035PT Datasheet(PDF) 2 Page - Vishay Siliconix |
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MBR4035PT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.vishay.com Vishay General Semiconductor Revision: 17-Aug-15 2 Document Number: 88679 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Maximum instantaneous forward voltage per diode VF (1) IF = 20 A TJ = 25 °C 0.70 0.72 V IF = 20 A TJ = 125 °C 0.60 0.62 IF = 40 A TJ = 25 °C 0.80 - IF = 40 A TJ = 125 °C 0.75 - Maximum instantaneous reverse current at rated DC blocking voltage per diode IR (1) TJ = 25 °C 1.0 mA TJ = 125 °C 100 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Thermal resistance, junction to case per diode RJC 1.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube 0 50 100 150 0 10 20 30 40 50 Case Temperature (°C) Resistive or Inductive Load 1 10 100 100 200 300 400 Number of Cycles at 60 Hz T J = TJ Max. 8.3 ms Single Half Sine-Wave |
Similar Part No. - MBR4035PT_15 |
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Similar Description - MBR4035PT_15 |
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