KAF−0402

www.onsemi.com

6

IMAGING PERFORMANCE

Specifications

Electro-Optical

All values measured at 25

°C and nominal operating conditions. These parameters exclude defective pixels.

Table 5. SPECIFICATIONS

Description

Symbol

Min.

Nom.

Max.

Units

Notes

Verification Plan

Saturation Signal

Vertical CCD Capacity

Horizontal CCD Capacity

Output Node Capacity

85,000

170,000

190,000

100,000

200,000

220,000

−

240,000

−

1

Design9

Quantum Efficiency

(see Figure 6)

−

−

−

Design9

Photoresponse Non-Linearity

PRNL

−

1.0

2.0

%

2

Photoresponse Non-Uniformity

PRNU

−

0.8

−

%

3

Die8

Dark Signal

−

−

15

6

30

10

4

Die8

Dark Signal Doubling

Temperature

−

6.3

7

°C

Design9

Dark Signal Non-Uniformity

DSNU

−

15

30

5

Die8

Dynamic Range

DR

72

76

−

dB

6

Design9

Charge Transfer Efficiency

CTE

0.99997

0.99999

−

Die8

Output Amplifier DC Offset

V

Design9

Output Amplifier Sensitivity

9

10

−

Design9

Output Amplifier Output

Impedance

180

200

220

W

Design9

Noise Floor

−

15

20

electrons

7

1. For pixel binning applications, electron capacity up to 330,000 can be achieved with modified CCD inputs.

3. One Sigma deviation of a 128

× 128 sample when CCD illuminated uniformly at half of saturation.

4. Average of all pixels with no illumination at 25

°C.

5. Average dark signal of any of 11

× 8 blocks within the sensor (each block is 128 × 128 pixels).

7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the output amplifier power

spectrum with a bandwidth = 5

⋅ pixel rate.

8. A parameter that is measured on every sensor during production testing.

9. A parameter that is quantified during the design verification activity.