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KAF-0402-AAA-CP-B2 Datasheet(PDF) 6 Page - ON Semiconductor |
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KAF-0402-AAA-CP-B2 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 16 page KAF−0402 www.onsemi.com 6 IMAGING PERFORMANCE Specifications Electro-Optical All values measured at 25 °C and nominal operating conditions. These parameters exclude defective pixels. Table 5. SPECIFICATIONS Description Symbol Min. Nom. Max. Units Notes Verification Plan Saturation Signal Vertical CCD Capacity Horizontal CCD Capacity Output Node Capacity NSAT 85,000 170,000 190,000 100,000 200,000 220,000 − 240,000 − e−/pix 1 Design9 Quantum Efficiency (see Figure 6) − − − Design9 Photoresponse Non-Linearity PRNL − 1.0 2.0 % 2 Photoresponse Non-Uniformity PRNU − 0.8 − % 3 Die8 Dark Signal JDARK − − 15 6 30 10 e−/pix/sec pA/cm2 4 Die8 Dark Signal Doubling Temperature − 6.3 7 °C Design9 Dark Signal Non-Uniformity DSNU − 15 30 e−/pix/sec 5 Die8 Dynamic Range DR 72 76 − dB 6 Design9 Charge Transfer Efficiency CTE 0.99997 0.99999 − Die8 Output Amplifier DC Offset VODC VRD VRD + 0.5 VRD + 1.0 V Design9 Output Amplifier Sensitivity VOUT/Ne− 9 10 − mV/e− Design9 Output Amplifier Output Impedance ZOUT 180 200 220 W Design9 Noise Floor ne− − 15 20 electrons 7 1. For pixel binning applications, electron capacity up to 330,000 can be achieved with modified CCD inputs. 2. Worst case deviation from straight line fit, between 2% and 90% of VSAT. 3. One Sigma deviation of a 128 × 128 sample when CCD illuminated uniformly at half of saturation. 4. Average of all pixels with no illumination at 25 °C. 5. Average dark signal of any of 11 × 8 blocks within the sensor (each block is 128 × 128 pixels). 6. 20LOG (NSAT /ne−) at nominal operating frequency and 25°C. 7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the output amplifier power spectrum with a bandwidth = 5 ⋅ pixel rate. 8. A parameter that is measured on every sensor during production testing. 9. A parameter that is quantified during the design verification activity. |
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