NVMFS4841N

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25

mV/°C

Zero Gate Voltage Drain Current

1

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

5.6

mV/°C

Drain−to−Source On Resistance

4.7

7.0

mW

9.2

11.4

Forward Transconductance

16

S

CHARGES AND CAPACITANCES

Input Capacitance

1436

pF

Output Capacitance

348

Reverse Transfer Capacitance

177

Total Gate Charge

11.5

17

nC

Threshold Gate Charge

2.0

Gate−to−Source Charge

5.0

Gate−to−Drain Charge

5.1

Total Gate Charge

25.4

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

13.5

ns

Rise Time

66.5

Turn−Off Delay Time

15.5

Fall Time

7.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.9

1.2

V

0.8

Reverse Recovery Time

20.5

ns

Charge Time

11.6

Discharge Time

8.9

Reverse Recovery Charge

10.7

nC

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.