NCP81174

www.onsemi.com

9

ELECTRICAL CHARACTERISTICS

to 100

°C. unless other noted.)

Characteristics

Unit

Max

Typ

Min

Symbol

Test Conditions

DRVON

Fall Time

CL (PCB) = 20pF,

DVo = 10% to 90%

−

20

−

ns

ENABLE

Enable Threshold

EN rising

−

1.1

1.15

V

EN falling

0.95

1.0

EN 3.3V IO Detection Threshold

EN rising

2.5

2.55

V

EN falling

2.35

2.4

EN Input Bias Current

External 1k pull−up to 3.3 V

−

−

1.0

mA

POWER SAVE INPUT

PSI High Threshold (3.3 V input logic),

Refer to Table 1

Rising

Falling

2.05

2.4

2.2

2.55

V

PSI High Threshold (1.8 V input logic),

Refer to Table 2

Rising

Falling

1.05

1.4

1.2

1.55

V

PSI Low Threshold

Rising

Falling

0.5

0.8

0.6

0.95

V

PSI Input Bias Current (Note 3)

−

−

1.0

mA

PWM OUTPUTS

Output High Voltage

Sourcing 500

mA

3.0

−

−

V

Mid Output Voltage

1.4

1.5

1.6

V

Output Low Voltage

Sinking 500

mA

−

−

0.7

V

Rise Time

CL (PCB) = 50 pF,

DVo = 10% to 90%

−

10

15

ns

Fall Time

CL (PCB) = 50 pF,

DVo = 10% to 90%

−

10

15

ns

4/3/2 PHASE DETECTION

Gate Pin Source Current

−

80

−

uA

Gate Pin Threshold Voltage

210

240

265

mV

Phase Detect Timer

−

20

27

ms

VR_RDY – STARTUP

Vout Startup Delay

Measured from EN to Vout Start up

from 0 V

1.3

ms

VR_RDY Startup Delay

Measured from EN to VR_RDY

assertion

1.9

ms

VR_RDY Shutdown Delay

Measured from EN to VR_RDY

de−assertion

200

350

ns

VR_RDY Low Voltage

−

−

0.4

V

VR_RDY Leakage Current

VR_RDY = 5 V

−

−

0.2

mA

PROTECTION – OCP, OVP, UVP

Current Limit ILIM to VDRP Gain

0.95

1.0

1.05

V/V

Current Limit ILIM to VDRP Gain in PSI

0.25

V/V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Guaranteed by design, may not be tested.