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JAN2N6351 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # JAN2N6351
Description  NPN DARLINGTON POWER SILICON TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JAN2N6351 Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
Qualified Level
2N6350
2N6351
2N6352
2N6353
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N6350
2N6352
2N6351
2N6353
Units
Collector-Emitter Voltage
VCER
80
150
Vdc
Collector-Base Voltage
VCBO
80
150
Vdc
Emitter-Base Voltage
VEBO
12
6.0
Vdc
Vdc
Base Current
IB
0.5
Adc
Collector Current
IC
5.0
10
(1)
Adc
Adc
2N6350
2N6351
2N6352
2N6353
Total Power Dissipation @ TA = 25
0C
@ TC = 100
0C
PT
1.0
(2)
5.0
(3)
2.0
(4)
25
(5)
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N6350
2N6351
2N6352
2N6353
Unit
Thermal Resistance, Junction-to-Case
RθJC
20
4.0
0C/W
1)
Applies for tp
≤ 10 ms, Duty cycle ≤ 50%
2)
Derate linearly @ 5.72 mW/
0C above TA > 250C
3)
Derate linearly @ 50 mW/
0C above TC > 1000C
4)
Derate linearly @ 11.4 mW/
0C above TA > 250C
5)
Derate linearly @ 250 mW/
0C above TC > 1000C
2N6350, 2N6351
TO-33*
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω
2N6350, 2N6352
2N6351, 2N6353
V(BR)CER
80
150
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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