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NBA3N200SDG Datasheet(PDF) 9 Page - ON Semiconductor |
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NBA3N200SDG Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 19 page NBA3N200S www.onsemi.com 9 A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, frequency = 500 kHz, duty cycle = 50 ±5%. B. C1, C2, C3, and C4 includes instrumentation and fixture capacitance within 2 cm of the D.U.T. and are 20%. C. R1 and R2 are metal film, surface mount, and 1% tolerance and located within 2 cm of the D.U.T. D. The measurement is made on test equipment with a −3 dB bandwidth of at least 1 GHz. Figure 8. Driver Enable and Disable Time Circuit and Definitions Figure 9. Maximum Steady State Output Voltage VA or VB |
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