NB3N853531EDTR2G datasheet(4/9 Pages) ONSEMI

Part #	NB3N853531EDTR2G

Description	3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer

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Manufacturer	ONSEMI [ON Semiconductor]

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NB3N853531E

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Table 5. CRYSTAL CHARACTERISTICS AND CONNECTIONS

Parameter

Min

Typ

Max

Unit

Mode of Oscillation

Fundamental Parallel

Frequency

12

40

MHz

Equivalent Series Resistance (ESR)

50

W

Shunt Capacitance

7

pF

Drive Level

1

mW

Table 6. DC CHARACTERISTICS VCC = 3.3 ±5% V (3.135 to 3.465 V), VEE = 0 V, TA = −40°C to +85°C (Note 5)

Symbol

Characteristic

Min

Typ

Max

Unit

IEE

Power Supply Current

60

mA

VIH

Input HIGH Voltage

2

VCC + 0.3

V

VIL

Input LOW Voltage

−0.3

0.8

V

IIH

Input High Current (VCC = 3.456 V)

CLK, CLK_SEL = 3.456 V

CLK_EN = 3.456 V

150

5

mA

IIL

Input LOW Current (VCC = 3.456 V)

CLK, CLK_SEL = 3.456 V

CLK_EN = 3.456 V

−5

−150

mA

VOH

Output HIGH Voltage

VCC − 1.4

VCC − 0.9

V

VOL

Output LOW Voltage

VCC − 2.0

VCC − 1.7

V

VOUTSWING Output Voltage Swing (peak−to−peak)

0.6

1.0

V

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

5. Outputs terminated 50 W to VCC − 2.0 V, see Figure 4.

Table 7. AC CHARACTERISTICS VCC = 3.3 ±5% V (3.135 to 3.465 V), VEE = 0 V, TA = −40°C to +85°C (Note 6)

Symbol

Characteristic

Min

Typ

Max

Unit

FMAX

Maximum Operating Frequency

0

266

MHz

tPD

Propagation Delay (Notes 7 and 9)

1.1

1.8

ns

tSKEWDC

Duty Cycle Skew same path similar conditions at 50 MHz (Notes 7, 8 and 9)

46

54

%

tSKEWO−O

Output to Output Skew Within A Device (Notes 7, 8 and 9)

30

ps

tSKEWD−D

Device to Device Skew similar path and conditions (Notes 7, 8 and 9)

200

ps

tJIT

Additive Phase Noise Jitter (RMS) @ 155.52 MHz (Integrated from 12 kHz to

20 MHz) See Figure 6. (Note 9)

0.053

ps

tr/tf

Output rise and fall times (20% and 80% points) (Note 9)

225

600

ps

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

6. Outputs terminated 50 W to VCC − 2.0 V, see Figure 4.

7. Measured under the same supply voltage, output loading, and input conditions.

8. Similar conditions.

9. Limits do not apply to overdriving XTAL_IN.

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