MTP4N50E datasheet(4/10 Pages) ONSEMI

Part #	MTP4N50E

Description	High Energy Power FET

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Manufacturer	ONSEMI [ON Semiconductor]

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MTP4N50E

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4

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Gate−To−Source Threshold Voltage

Variation With Temperature

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Breakdown Voltage Variation

With Temperature

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance versus Drain Current

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation

With Temperature

8

6

4

2

20

16

12

8

4

0

1.2

1.1

1

0.9

0.8

−50

−25

0

25

50

75

100

125

1

8

6

4

2

0

8

6

4

2

0

1.2

1.1

1

0.9

0.8

−50

0

50

100

150

2.8

2.4

1.2

0

10

8

6

4

2

0

2.5

0

TJ = 25°C

7 V

6 V

5 V

VDS = VGS

ID = 0.25 mA

TJ = 100°C

−55

°C

25

°C

VGS = 0

ID = 0.25 mA

TJ = 100°C

25

°C

−55

°C

VGS = 10 V

ID = 2 A

VGS = 10 V

VDS ≥ 10 V

10

−50

0

50

100

2

4 V

0

2

0.8

0.4

2

1.5

1

0.5

150

8 V

2

1.6

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