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JANTX2N3867 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANTX2N3867 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/350 Devices Qualified Level 2N3867 2N3867S 2N3868 2N3868S JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3867 2N3867S 2N3868 2N3868S Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCBO 40 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 3.0 Adc Total Power Dissipation @ TA = 25 0C(1) @ TC = 25 0C(2) PT 1.0 10 W W Operating & Storage Temperature Range TOP, TSTG -55 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC 17.5 0C/W 1) Derate linearly 5.71 mW/ 0C for TA > +250C 2) Derate linearly 57.1 mW/ 0C for TC > +250C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc 2N3867, S 2N3868, S V(BR)CBO 40 60 Vdc Collector-Emitter Breakdown Voltage IC = 20 mAdc 2N3867, S 2N3868, S V(BR)CEO 40 60 Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc V(BR)EBO 4.0 Vdc Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 40 Vdc 2N3867, S VEB = 2.0 Vdc, VCE = 60 Vdc 2N3868, S ICEX 1.0 1.0 µAdc Collector-Base Cutoff Current VCB = 40 Vdc 2N3867, S VCB = 60 Vdc 2N3868, S ICBO 100 µAdc Emitter-Base Cutoff Current VEB = 4 Vdc IEBO 100 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 TO-5* 2N3867, 2N3868 TO-39* (TO-205AD) 2N3867S, 2N3868S |
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