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SSF20NS60 Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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SSF20NS60 Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
1 / 7 page SSF20NS60 600V N-Channel MOSFET www.goodark.com Page 1 of 7 Rev.1.2 Main Product Characteristics Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 13 IDM Pulsed Drain Current② 80 A Power Dissipation③ 208 W PD @TC = 25°C Linear Derating Factor 1.4 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=13.8mH 248 mJ IAR Avalanche Current @ L=13.8mH 6 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C VDSS 600V RDS(on) 170mΩ(typ.) ID 20A TO-220 Marking and Pin Assignment Schematic Diagram High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product The SSF20NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process.This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving. |
Similar Part No. - SSF20NS60_15 |
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Similar Description - SSF20NS60_15 |
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