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2N2151 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N2151
Description  5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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MSC0942A.DOC 11-03-98
2N2151
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(25
°°Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max
Units
BVCBO*
Collector-Base Voltage
IC = 100 µAdc, Cond. D
150
----
Vdc
BVCEO*
Collector-Emitter
Voltage (Note 1)
IC = 50 mAdc, Cond. D
100
----
Vdc
BVEBO*
Emitter-Base Voltage
IE = 2 µAdc, Cond. D
8
----
Vdc
ICEO*
Collector-Emitter
Cutoff Current
VCE = 120 Vdc Cond. D
----
5
µAdc
ICEX*
Collector-Emitter
Cutoff Current
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A TA = 150°°C
----
----
5
100
µAdc
µA
ICBO*
Collector-Base
Cutoff Current
VCB = 120 Vdc, Cond. D
----
5
µAdc
hFE*
DC Current Gain
(Note 1)
IC = 1 Adc, VCE = 5 Vdc
IC = 0.5 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 5 Vdc
40
40
40
120
120
----
----
----
----
hFE*
AC Current Gain
IC = 0.1 Adc, VCE = 30 Vdc, f = 1 KHz
40
160
----
VCE(sat)*
Collector Saturation
Voltage (Note 1)
IC = 1 Adc, IB = 0.1 Adc
----
1.0
Vdc
VBE(sat)*
Base Saturation
Voltage (Note 1)
IC = 1 Adc, IB = 0.1 Adc
----
1.2
Vdc
VBE(on)*
Base On-Voltage
(Note 1)
IC = 1 Adc, VCE = 2 Vdc
----
1.2
Vdc
fT*
Gain-Bandwidth
Product
IC = 1 Adc, VCE = 30 Vdc, f = 10 MHz
10
70
MHz
Cob*
Output Capacitance
VCB = 20 Vdc, 1E = 0, f = 1 MHz
----
160
pf
Note 1: Pulse Test: PW = 300
µµs, Duty Cycle ≤≤ 2%.
* Indicates JEDEC registered data.




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