NTMFS4H013NFT1G datasheet(4/6 Pages) ONSEMI

Part #	NTMFS4H013NFT1G

Description	Power MOSFET

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NTMFS4H013NF

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

25

20

15

10

5

0

500

1500

3000

4500

5000

56

24

16

8

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

1.0

0.7

0.6

0.5

0.4

0.3

0

20

60

80

120

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE (°C)

100

10

1

0.1

0.01

0.1

1

10

100

1000

150

125

100

75

50

25

0

40

80

120

180

1000

2500

4000

40

48

TJ = 25°C

VGS = 12 V

f = 1 MHz

Ciss

Coss

Crss

TJ = 25°C

VDS = 12 V

ID = 30 A

QT

Qgd

Qgs

td(off)

td(on)

tr

tf

TJ = 125°C

TJ = 25°C

0 V

≤ VGS ≤ 10 V

Single Pulse

TA = 25°C

TJ = 150°C

100

ms

1 ms

10 ms

dc

RDS(on) Limit

Thermal Limit

Package Limit

ID = 33 A

60

100

140

VDS = 12 V

ID = 15 A

VGS = 10 V

2000

3500

32

0.8

160

20

160

0.9

40

100

140

TJ = −55°C

10

ms

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