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KAI-11002-ABA-CR-B1 Datasheet(PDF) 10 Page - ON Semiconductor |
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KAI-11002-ABA-CR-B1 Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 33 page KAI−11002 www.onsemi.com 10 IMAGING PERFORMANCE Table 5. IMAGING PERFORMANCE OPERATIONAL CONDITIONS (Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.) Description Condition Notes Frame Time 1,732 ms 1 Horizontal Clock Frequency 10 MHz Light Source Continuous Red, Green and Blue LED Illumination Centered at 450, 530 and 650 nm 2, 3 Operation Nominal Operating Voltages and Timing 1. Electronic shutter is not used. Integration time equals frame time. 2. LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP−8115. 3. For monochrome sensor, only green LED used. Specifications Table 6. PERFORMANCE SPECIFICATIONS Description Symbol Min. Nom. Max. Unit Sample Plan Temperature Tested at ( 5C) ALL CONFIGURATIONS Maximum Photoresponse Non-Linearity (Notes 2, 3) NL N/A 2 − % Design Maximum Gain Difference between Outputs (Notes 2, 3) DG N/A 10 − % Design Max. Signal Error due to Non-Linearity Dif. (Notes 2, 3) DNL N/A 1 − % Design Horizontal CCD Charge Capacity HNe − 139 − ke− Design Vertical CCD Charge Capacity VNe 90 91 − ke− Die Photodiode CCD Charge Capacity PNe 58 60 − ke− Die Horizontal CCD Charge Transfer Efficiency HCTE 0.99999 − N/A Design Vertical CCD Charge Transfer Efficiency VCTE 0.99999 − N/A Design Photodiode Dark Current IPD N/A N/A − − 800 0.15 e/p/s nA/cm2 Die 27, 40 Vertical CCD Dark Current IVD N/A N/A − − 3,800 0.5 e/p/s nA/cm2 Die 27, 40 Image Lag Lag N/A < 10 50 e− Design Anti-Blooming Factor XAB 100 300 N/A Design Vertical Smear Smr N/A −85 −75 dB Design Total Noise (Note 4) ne−T − 30 − e− rms Design Dynamic Range (Note 5) DR − 66 − dB Design Output Amplifier DC Offset VODC 4 9 14 V Die Output Amplifier Bandwidth (Note 6) f−3dB − 106 − MHz Die Output Amplifier Impedance ROUT 100 150 200 W Die Output Amplifier Sensitivity DV/DN − 13 − mV/e− Design |
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