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KAF-8300-AXC-CB-AE Datasheet(PDF) 8 Page - ON Semiconductor |
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KAF-8300-AXC-CB-AE Datasheet(HTML) 8 Page - ON Semiconductor |
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8 / 28 page  KAF−8300 www.onsemi.com 8 IMAGING PERFORMANCE Table 5. TYPICAL OPERATIONAL CONDITIONS Description Condition − Unless otherwise Noted Notes Readout Time (tREADOUT) 370.36 ms Includes tVoverclock & tHoverclock Integration Time (tINT) 33 ms Horizontal Clock Frequency 28 MHz Light Source (LED) Red, Green, Blue, Orange Mode Flush − Integrate − Readout Cycle Table 6. SPECIFICATIONS Description Symbol Min. Nom. Max. Unit Notes Verification Plan ALL DEVICES Minimum Column MinColumn 575 − − mV 1, 4 Die18 Linear Saturation Signal Ne-SAT 25.5 − − ke- 1, 3, 4 Design19 Charge to Voltage Conversion Q−V 22.5 23.0 − mV/e- Design19 Linearity Error LeLow10 LeLow33 LeHigh −10 −10 −10 − − − 10 10 10 % 2, 5, 6 2, 5, 6 2, 4, 5 Die18 Dark Signal (Active Area Pixels) AA_DarkSig − − 200 e-/s 4, 8 Die18 Dark Signal (Dark Reference Pixels) DR_DarkSig − − 200 e-/s 4, 8 Die18 Readout Cycle Dark Signal Dark_Read − − 15 mV/s Die18 Flush Cycle Dark Signal Dark_Flush − 43 90 mV/s Die18 Dark Signal Non-Uniformity DSNU DSNU_Step DSNU_H − − − 1.30 0.14 0.40 3.0 0.5 1.0 mV p-p 4, 9 Die18 Dark Signal Doubling Temperature DT − 5.8 − °C Design19 Dark Reference Difference, Active Area DarkStep −3.5 0.15 3.5 mV 4 Die18 Total Noise Dfld_noi − − 1.08 mV 4, 10 Die18 Total Sensor Noise N − 16 − e- rms 19 Design19 Linear Dynamic Range DR − 64.4 − dB 11 Design19 Horizontal Charge Transfer Efficiency HCTE 0.999990 0.999995 − % 4, 13, 21 Die18 Vertical Charge Transfer Efficiency VCTE 0.999997 0.999999 − % 4, 21 Die18 Blooming Protection X_b 1,000 − − x ESAT 14 Design19 Vertical Bloom on Transfer VBloomF −20 − 20 mV 4 Die18 Horizontal Crosstalk H_Xtalk −20 − 20 mV 4 Die18 Horizontal Overclock Noise Hoclk_noi 0 − 1.08 mV 4 Die18 Output Amplifier Bandwidth f−3dB 88 − 159 MHz 4, 6, 16 Die18 Output Impedance, Amplifier ROUT 100 − 180 W 6 Die18 Hclk Feedthru VHFT − − 70 mV 4, 17 Die18 Reset Feedthru VRFT 500 710 1,000 mV Design19 |
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