KAF−16801

www.onsemi.com

6

IMAGING PERFORMANCE

Table 5. TYPICAL OPERATIONAL CONDITIONS

(All values measured at 25

°C, and nominal operating conditions. These parameters exclude defective pixels.)

Description

Symbol

Min.

Nom.

Max.

Units

Notes

Verification

Plan

Saturation Signal

Vertical CCD Capacity

Horizontal CCD Capacity

Output Node Capacity

−

90,000

−

100,000

200,000

180,000

100,000

−

250,000

1

Design12

Photoresponse Non-Linearity

PRNL

−

1

2

%

2

Design12

Photoresponse Non-Uniformity

PRNU

−

1

3

%

3, 10

Die11

Dark Signal

−

−

18

3.5

50

10

4

Die11

Dark Signal Doubling Temperature

5

6.3

7.5

°C

Design12

Dark Signal Non-Uniformity

DSNU

−

18

50

5, 10

Die11

Dynamic Range

DR

73

76

−

dB

6

Design12

Charge Transfer Efficiency

CTE

0.99997

0.99999

−

Die11

Output Amplifier DC Offset

V

7

Die11

Output Amplifier Bandwidth

−

140

−

MHz

8

Design12

Output Amplifier Sensitivity

12.5

13

14

Design12

Output Amplifier Output Impedance

−

130

−

W

Design12

Noise Floor

−

15

20

electrons

9

Die11

1. For pixel binning applications, electron capacity up to 270,000 can be achieved with modified CCD inputs. Each sensor may have to be

optimized individually for these applications. Some performance parameters may be compromised to achieve the largest signals.

3. One Sigma deviation of a 128

× 128 sample when CCD illuminated uniformly.

4. Average of all pixels with no illumination at 25

°C.

5. Average dark signal of any of 32

× 32 blocks within the sensor (each block is 128 × 128 pixels).

7. Video level offset with respect to ground.

8. Assumes 10 pF off-chip load.

9. Output amplifier noise at 25

10. Specification excludes region [1, 1, 400, 400]. See Dark Current Non-uniformity.

11. A parameter that is measured on every sensor during production testing.

12. A parameter that is quantified during the design verification activity.