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KAF-8300-AAB-CB-AE Datasheet(PDF) 10 Page - ON Semiconductor

Part # KAF-8300-AAB-CB-AE
Description  Full Frame CCD Image Sensor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAF-8300-AAB-CB-AE Datasheet(HTML) 10 Page - ON Semiconductor

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KAF−8300
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10
Table 6. SPECIFICATIONS (continued)
Description
Verification
Plan
Notes
Unit
Max.
Nom.
Min.
Symbol
MONOCHROME DEVICES
Sensitivity − Monochrome
Resp
465
655
mV
Die18
Quantum Efficiency
Microlens, Clear Glass (540 nm)
Microlens, No Glass (540 nm)
Microlens, AR Glass (540 nm)
No Microlens, Clear G. (560 nm)
QE
54
60
56
37
%
Design19
1. Increasing output load currents to improve bandwidth will decrease these values.
2. Specified from 12
°C to 60°C.
3. Saturation signal level achieved while meeting Le specification. Specified from 0
°C to 40°C.
4. Operating temperature = 60
°C.
5. Worst case deviation, (from 10 mV to VSAT min), relative to a linear fit applied between 0 and 500 mV exposure.
6. Operating temperature = 25
°C.
7. Peak to peak non-uniformity test based on an average of 185
× 185 blocks.
8. Average non-illuminated signal with respect to over clocked horizontal register signal.
9. Absolute difference between the maximum and minimum average signal levels of 185
× 185 blocks within the sensor.
10. Dark rms deviation of a multi-sampled pixel as measured using the KAF−8300 Evaluation Board.
11. 20Log (VSAT / N).
12. Gradual variations in hue (red with respect to green pixels and blue with respect to green pixels) in regions of interest of 185
× 185 blocks.
13. Measured per transfer at 80% of VSAT.
14. ESAT equals the exposure required to achieve saturation. X_b represents the number of ESAT exposures the sensor can tolerate before
failure. X_b characterized at 25
°C.
15. Video level DC offset with respect to ground at clamp position. Refer to Figure 17.
16. Last stage only. CLOAD = 10 pF. Then f−3dB = (1 / (2p ⋅ ROUT ⋅ CLOAD)).
17. Amount of artificial signal due to H1 coupling.
18. A parameter that is measured on every sensor during production testing.
19. A parameter that is quantified during the design verification activity.
20. Calculated value subtracting the noise contribution from the KAF−8300 Evaluation Board.
21. Process optimization has effectively eliminated vertical striations.
22. CTE = 1 − CTI. Where CTE is charge transfer efficiency and CTI is charge transfer inefficiency. CTI is the measured value.


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