PRELIMINARY

1N6820

(MSASC75W100F)

1N6820R

(MSASC75W100FR)

100 Volts

75 Amps

Features

• Tungsten schottky barrier for low VF

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

polarity (strap is cathode: 1N6820R)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

45

Volts

Working Peak Reverse Voltage

45

Volts

DC Blocking Voltage

45

Volts

Average Rectified Forward Current, Tc

≤125°C

75

Amps

derating, forward current, Tc

≥ 125°C

4

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

500

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

2

Amp

Junction Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case:

1N6820

1N6820R

θ

JC

0.50

0.65

°C/W

Maximum Ratings @ 25

°C (unless otherwise specified)

Mechanical Outline

ThinKey™ 4

Datasheet# MSC1031A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW REVERSE

LEAKAGE

SCHOTTKY DIODE