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NCP3133A Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP3133A Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 13 page  NCP3133A http://onsemi.com 5 Table 4. ELECTRICAL CHARACTERISTICS (VDD = VIN = 3.3 V and VDD = VIN = 5.0 V, over recommended free air temperature range, PGND = GND unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units POWER SUPPLY VIN operation voltage VIN Nominal input voltage range 2.9 5.5 V VIN UVLO threshold Ramp up; EN = ‘HI’ 2.8 V VIN UVLO hysteresis 130 mV VDD internal bias voltage Nominal 3.3 V input voltage range 2.9 5.5 V VDD UVLO threshold Ramp up; EN = ‘HI’ 2.8 V VDD UVLO hysteresis 75 mV VOLTAGE MONITOR Power good low voltage Pull−down voltage with 4 mA sink current 200 400 mV Power good high leakage current −2.0 0 2.0 mA Power good threshold Feedback lower voltage limit 80 83 86 %Vref Feedback higher voltage limit 114 117 120 %Vref Power good high delay tPGDELAY 400 ms Minimum Vin voltage for valid PGD at start up Measured at Vin with 1 mA (or 2 mA) sink current on PGD pin at start up 1 V Output over -voltage protection threshold at FB 114 117 120 %Vref Over -voltage blanking time TOVPDLY Time from FB higher than 20% of Vref to OVP fault 1.0 1.7 2.5 ms Output under -voltage protection threshold at FB 80 83 86 %Vref Under -voltage blanking time TUVPDLY Time from FB lower than 20% of Vref to UVP fault 11 ms SUPPLY CURRENT (TJ = +255C) VDD quiescent current IVDD EN = ‘HI’, no switching 2.2 3.5 mA VDD shutdown supply current IVDD_SD EN = ‘LO’ 8.0 mA Vin shutdown supply current IQSHDN EN = ‘LO’ 3.5 mA FEEDBACK VOLTAGE & ERROR AMPLIFIER Reference voltage at FB VREF 0 °C < TA < 85°C −40 °C < TA < 85°C 594 592.5 600 600 606 607.5 mV Unity gain bandwidth (Note 1) 14 MHz Open loop gain (Note 1) 80 dB FB pin leakage current 100 nA Output sourcing and sinking current (Note 1) Ccomp = 20 pF 5 mA Slew rate (Note 1) 5 V/ ms OVER CURRENT PROTECTION & ZERO CROSSING Over -current limit on high−side FET When Iout exceeds this threshold for 4 consecutive cycles. Vin = 3.3 V, Vout = 1.5 V with 1 mH inductor, TA = +25°C 4.2 4.8 5.4 A One time over -current latch off on the low−side FET Immediately shut down when sensed cur- rent reach this value. Vin = 3.3 V, Vout = 1.5 V with 1 mH inductor, TA = +25°C 4.8 5.4 A Zero crossing comparator internal offset (Note 1) PGND−SWN, Automatic CCM/DCM mode −4.5 −3.0 −1.5 mV |
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