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BQ25120 Datasheet(PDF) 10 Page - Texas Instruments |
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BQ25120 Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 68 page  BQ25120 SLUSBZ9A – AUGUST 2015 – REVISED AUGUST 2015 www.ti.com Electrical Characteristics (continued) Circuit of , V(UVLO) < VIN < V(OCP) and VIN > V(BAT) + V(SLP), TJ = -40 to 85°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT Quiescent current for VINLS 0.9 µA in LDO mode IIN(LDO) OFF-state supply current 0.25 µA High-level input voltage for VIH(LSCTRL) 1.15 V > V(VINLS) > 6.6 V 0.75 x V(SYS) 6.6 V LSCTRL Low-level input voltage for VIL(LSCTRL) 1.15 V > V(VINLS) > 6.6 V 0.25 x V(SYS) V LSCTRL PUSHBUTTON TIMER (MR) VIL Low-level input voltage 0.3 V RPU Internal pull-up resistance 120 k Ω VBAT MONITOR Battery Voltage Monitor VBMON V(BAT) Falling - Including 2% increment -3.5 3.5 %V(BATREG) Accuracy BATTERY-PACK NTC MONITOR VHOT High temperature threshold VTS falling, 1% VIN Hysteresis 14.5 15 15.2 %VIN VWARM Warm temperature threshold VTS falling, 1% VIN Hysteresis 20.1 20.5 20.8 %VIN VCOOL Cool temperature threshold VTS rising, 1% VIN Hysteresis 35.4 36 36.4 %VIN VCOLD Low temperature threshold VTS rising, 1% VIN Hysteresis 39.3 39.8 40.2 %VIN TSOFF TS Disable threshold VTS rising, 2% VIN Hysteresis 55 60 %VIN PROTECTION V(UVLO) IC active threshold voltage VIN rising 3.4 3.6 3.8 V VUVLO(HYS) IC active hysteresis VIN falling from above VUVLO 150 mV Battery Undervoltage Lockout Programmable Range for V(BUVLO) VBAT 2.2 3.0 V threshold Range falling, 200 mV Hysteresis V(BUVLO) Default Battery Undervoltage V(BAT) falling -2.5% 2.5% Lockout Accuracy V(BATSHORT) Battery short circuit threshold Battery voltage falling 2 V V(BATSHORT_HY Hysteresis for V(BATSHORT) 100 mV S) Battery short circuit charge I(BATSHORT) I(PRETERM) mA current Sleep entry threshold, VIN - V(SLP) 2 V < VBAT < V(BATREG), VIN falling 65 120 mV V(BAT) V(SLP_HYS) Sleep-mode exit hysteresis VIN rising above V(SLP) 40 65 100 mV Maximum Input Supply OVP VOVP VIN rising, 100 mV hysteresis 5.35 5.55 5.75 V threshold voltage tDGL_OVP Deglitch time, VIN OVP falling VIN falling below VOVP, 1V/us 32 ms TSHTDWN Thermal trip VIN > VUVLO 114 °C THYS Thermal hysteresis VIN > VUVLO 11 °C Deglitch time, Thermal tDGL_SHTDWN TJ rising above TSHTDWN 4 µs shutdown I2C INTERFACE I2C Bus Specification 100 400 kHz standard and fast mode frequency support VIL Input low threshold level VPULLUP = 1.1 V, SDA and SCL 0.275 V VIH Input high threshold level VPULLUP = 1.1 V, SDA and SCL 0.825 V VIH Input high threshold level VPULLUP = 3.3 V, SDA and SCL 2.475 V VOL Output low threshold level IL = 5mA, sink current, VPULLUP = 1.1 V 0.275 V IBIAS High-Level leakage current VPULLUP = 1.8V, SDA and SCL 1 µA INT, PG, and RESET OUTPUT (Open Drain) VOL Low level output threshold Sinking current = 5 mA 0.25 x V(SYS) V IIN Bias current into pin Pin is high impedance, IOUT = 0 mA 0 12 nA 10 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: BQ25120 |
Similar Part No. - BQ25120_15 |
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Similar Description - BQ25120_15 |
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