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KAI-02150-QBA-JD-BA Datasheet(PDF) 10 Page - ON Semiconductor |
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KAI-02150-QBA-JD-BA Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 42 page KAI−02150 www.onsemi.com 10 IMAGING PERFORMANCE Typical Operational Conditions Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions. Table 6. TYPICAL OPERATIONAL CONDITIONS Description Condition Notes Light Source Continuous Red, Green and Blue LED Illumination. 1 Operation Nominal Operating Voltages and Timing. 1. For monochrome sensor, only green LED used. Specifications Table 7. PERFORMANCE SPECIFICATIONS Description Symbol Min. Nom. Max. Unit Sampling Plan Temperature Tested at ( 5C) ALL CONFIGURATIONS Dark Field Global Non-Uniformity DSNU − − 2.0 mVpp Die 27, 40 Bright Field Global Non-Uniformity (Note 1) − 2.0 5.0 % rms Die 27, 40 Bright Field Global Peak to Peak Non-Uniformity (Note 1) PRNU − 5.0 15.0 % pp Die 27, 40 Bright Field Center Non-Uniformity (Note 1) − 1.0 2.0 % rms Die 27, 40 Maximum Photoresponse Non-Linearity (Note 2) NL − 2 − % Design Maximum Gain Difference between Outputs (Note 2) DG − 10 − % Design Maximum Signal Error due to Non-Linearity Differences (Note 2) DNL − 1 − % Design Horizontal CCD Charge Capacity HNe − 55 − ke− Design Vertical CCD Charge Capacity VNe − 45 − ke− Design Photodiode Charge Capacity (Note 3) PNe − 20 − ke− Die 27, 40 Horizontal CCD Charge Transfer Efficiency HCTTE 0.999995 0.999999 − Die Vertical CCD Charge Transfer Efficiency VCTE 0.999995 0.999999 − Die Photodiode Dark Current IPD − 7 70 e/p/s Die 40 Vertical CCD Dark Current IVD − 100 300 e/p/s Die 40 Image Lag Lag − − 10 e− Design Anti-Blooming Factor XAB 300 − − Design Vertical Smear Smr − −100 − dB Design Read Noise (Note 4) ne−T − 12 − e− rms Design Dynamic Range (Notes 4, 5) DR − 64 − dB Design Output Amplifier DC Offset VODC − 9.4 − V Die 27, 40 Output Amplifier Bandwidth (Note 6) f−3db − 250 − MHz Die Output Amplifier Impedance ROUT − 127 − W Die 27, 40 Output Amplifier Sensitivity DV/DN − 34 − mV/e− Design |
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