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KAI-04070-ABA-JR-BA Datasheet(PDF) 3 Page - ON Semiconductor |
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KAI-04070-ABA-JR-BA Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 50 page  KAI−04070 www.onsemi.com 3 DEVICE DESCRIPTION Architecture Figure 2. Block Diagram 16 Dark 16 V1B 16 Buffer 16 16 24 1024 1024 1024 1024 V2B V3B V4B V1T V2T V3T V4T VDDa VOUTa GND VDDc VOUTc GND VDDd VOUTd GND VDDb VOUTb GND V1B V2B V3B V4B V1T V2T V3T V4T H2SLa OGa H2SLc OGc H2 SLd OGd H2SLb OGb ESD ESD 824 11 1 16 24 11 1 16 8 24 11 1 16 824 11 1 16 24 16 DevID R1 a RDab R2ab R1b RDab R2ab R1c RDcd R2cd R1d RDcd R2cd HLOD HLOD 1 Dummy 1 Dummy (Last VCCD Phase = V1 à H1S) 2048H x 2048V 7.4 mm x 7.4mm Pixels Dark Reference Pixels There are 16 dark reference rows at the top and 16 dark rows at the bottom of the image sensor. The 24 dark columns on the left or right side of the image sensor should be used as a dark reference. Under normal circumstances use only the center 22 columns of the 24 column dark reference due to potential light leakage. Dummy Pixels Within each horizontal shift register there are 12 leading additional shift phases. These pixels are designated as dummy pixels and should not be used to determine a dark reference level. In addition, there is one dummy row of pixels at the top and bottom of the image. Active Buffer Pixels 16 unshielded pixels adjacent to any leading or trailing dark reference regions are classified as active buffer pixels. These pixels are light sensitive but are not tested for defects and non-uniformities. Image Acquisition An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs within the individual silicon photodiodes. These photoelectrons are collected locally by the formation of potential wells at each photosite. Below photodiode saturation, the number of photoelectrons collected at each pixel is linearly dependent upon light level and exposure time and non-linearly dependent on wavelength. When the photodiodes charge capacity is reached, excess electrons are discharged into the substrate to prevent blooming. ESD Protection Adherence to the power-up and power-down sequence is critical. Failure to follow the proper power-up and power-down sequences may cause damage to the sensor. See Power-Up and Power-Down Sequence section. |
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