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KAI-02170-ABA-JD-AE Datasheet(PDF) 7 Page - ON Semiconductor |
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KAI-02170-ABA-JD-AE Datasheet(HTML) 7 Page - ON Semiconductor |
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7 / 50 page  KAI−02170 www.onsemi.com 7 IMAGING PERFORMANCE Table 5. TYPICAL OPERATIONAL CONDITIONS (Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.) Description Condition Notes Light Source Continuous Red, Green and Blue LED Illumination. 1 Operation Nominal Operating Voltages and Timing. 1. For monochrome sensor, only green LED used. Specifications Table 6. PERFORMANCE SPECIFICATIONS Description Symbol Min. Nom. Max. Unit Sampling Plan Temperature Tested at ( 5C) ALL CONFIGURATIONS Dark Field Global Non-Uniformity DSNU − − 2.0 mVpp Die 27, 40 Bright Field Global Non-Uniformity (Note 1) − 2.0 5.0 % rms Die 27, 40 Bright Field Global Peak to Peak Non-Uniformity (Note 1) PRNU − 5.0 15.0 % pp Die 27, 40 Bright Field Center Non-Uniformity (Note 1) − 1.0 2.0 % rms Die 27, 40 Maximum Photoresponse Non-Linearity High Gain (4,000 to 20,000 electrons) High Gain (4,000 to 40,000 electrons) Low Gain (8,000 to 80,000 electrons) NL_HG1 NL_HG2 NL_LG1 − − − 2 3 6 − − − % Design Maximum Gain Difference between Outputs (Note 2) DG − 10 − % Design Horizontal CCD Charge Capacity HNe − 90 − ke− Design Vertical CCD Charge Capacity VNe − 60 − ke− Design Photodiode Charge Capacity (Note 3) PNe − 44 − ke− Die 27, 40 Floating Diffusion Capacity − High Gain FNe_HG 40 − − ke− Die 27, 40 Floating Diffusion Capacity − Low Gain FNe_LG 160 − − ke− Die 27, 40 Horizontal CCD Charge Transfer Efficiency HCTE 0.999995 0.999999 − Die Vertical CCD Charge Transfer Efficiency VCTE 0.999995 0.999999 − Die Photodiode Dark Current IPD − 7 70 e/p/s Die 40 Vertical CCD Dark Current IVD − 140 400 e/p/s Die 40 Image Lag Lag − − 10 e− Design Anti-Blooming Factor XAB 1,000 − − Design Vertical Smear Smr − −115 − dB Design Read Noise (Note 4) High Gain Low Gain ne−T − 12 45 − e− rms Design Dynamic Range, Standard (Notes 4, 5) DR − 70.5 − dB Design Dynamic Range, Extended Linear Dynamic Range Mode (XLDR) (Notes 4, 5) XLDR − 82.5 − dB Design Output Amplifier DC Offset VODC − 9.0 − V Die 27, 40 Output Amplifier Bandwidth (Note 6) f−3db − 250 − MHz Die Output Amplifier Impedance ROUT − 127 − W Die 27, 40 Output Amplifier Sensitivity High Gain Low Gain DV/DN − − 33 8.7 − − mV/e− Design |
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