Si photodiode arrays

S4111/S4114 series

16, 35, 46 element Si photodiode array for UV

to NIR

www.hamamatsu.com

1

Large photosensitive area

Low crosstalk

S4111 series: Enhanced infrared sensitivity,

low dark current

S4114 series: IR sensitivity suppressed type,

low terminal capacitance,

high-speed response

Features

Multichannel spectrophotometers

Color analyzers

Light spectrum analyzers

Light position detection

Applications

The S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode ar-

rays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV

to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, the S4111/S4114 series

are able to detect low level light with high sensitivity. Crosstalk between elements is minimized to maintain signal purity. Spe-

cial filters can be attached as the input window (custom order products).

Structure / Absolute maximum ratings

Type no.

Window

material

Package

Photosensitive

area

(per 1 element)

Between

elements

measure

Between

elements

pitch

Number

of

elements

Absolute maximum ratings

Reverse

voltage

Operating

temperature

Topr

Storage

temperature

Tstg

(mm)

Size

(mm)

Effective area

(mm)

(mm)

(V)

(°C)

(°C)

S4111-16R

Resin potting

18 pin DIP

1.45 × 0.9 1.305

0.1

1.0

16

15

-20 to +60

-20 to +80

S4111-16Q*

Quartz

S4111-35Q*

40 pin DIP

4.4 × 0.9

3.96

35

S4111-46Q*

48 pin DIP

46

S4114-35Q*

40 pin DIP

35

S4114-46Q*

48 pin DIP

46

* Refer to “Precautions against UV light exposure.”

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings

is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute

maximum ratings.

Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)

Type no.

Spectral

response

range

λ

Peak

sensitivity

wavelength

λp

Photosensitivity

S

Dark

current

Max.

Shunt

resistance

Rsh

Terminal

capacitance

Ct

Rise time

tr

Ω

λ=655 nm

NEP

λ=λp

λp

(G

Ω)

Typ.

(G

Ω)

(nm)

(nm)

(A/W) (A/W) (A/W)

(pA)

(pA)

(pF)

(pF)

(μs)

S4111-16R

340 to 1100

960

0.58

-

0.39

5

25

2.0

250

200

50

0.5

S4111-16Q

190 to 1100

0.08

0.43

S4111-35Q

0.08

0.43

10

50

1.0

30

550

120

1.2

S4111-46Q

S4114-35Q

190 to 1000

800

0.50

60

300

0.15

2

35

20

0.1

S4114-46Q