TPS62746_15 datasheet(5/25 Pages) TI

Part #	TPS62746

Description	TPS62746 300 mA High Efficiency Buck Converter with Ultra-low Quiescent Current and VIN Switch

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TPS62746

www.ti.com

SLVSD27A – JUNE 2015 – REVISED AUGUST 2015

8.4 Thermal Information

TPS62746

THERMAL METRIC(1)

YFP

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

103

°C/W

RθJCtop

Junction-to-case (top) thermal resistance

1.0

°C/W

RθJB

Junction-to-board thermal resistance

20

°C/W

ψJT

Junction-to-top characterization parameter

0.3

°C/W

ψJB

Junction-to-board characterization parameter

20

°C/W

RθJCbot

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

8.5 Electrical Characteristics

VIN = 3.6V, TA = –40°C to 85°C typical values are at TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

EN = VIN, CTRL = GND, IOUT = 0µA, VOUT = 1.8V, device not switching

360

1800

Operating

IQ

nA

quiescent current

EN = VIN, IOUT = 0mA, CTRL = GND, VOUT = 1.8V , device switching

460

ISD

Shutdown current

EN = GND, shutdown current into VIN

70

1000

nA

VTH_ UVLO+

Rising VIN

2.075

2.15

Undervoltage

V

lockout threshold

VTH_UVLO-

Falling VIN

1.925

2

INPUTS (EN, CTRL, VSEL )

High level input

VIH TH

2.2V

≤ VIN ≤ 5.5V

1.1

V

threshold

Low level input

VIL TH

2.2V

≤ VIN ≤ 5.5V

0.4

V

threshold

IIN

Input bias Current

10

25

nA

POWER SWITCHES

High side

MOSFET on-

0.45

1.12

resistance

RDS(ON)

IOUT = 50mA

Ω

Low Side

MOSFET on-

0.22

0.65

resistance

High side

MOSFET switch

3.0V

≤ VIN ≤ 5.5V

480

600

720

mA

current limit

I

Low side MOSFET

600

mA

switch current limit

OUTPUT VOLTAGE DISCHARGE

MOSFET on-

RDSCH_VOS

EN = GND, IVOS = -10mA into VOS pin

30

65

Ω

resistance

Bias current into

IIN_VOS

EN = VIN, VOUT = 2V

40

1010

nA

VOS pin

INPUT VOLTAGE SWITCH (VINSW)

MOSFET on-

RRDSON

IVINSW = 1mA, CTRL = VIN, VIN = 2.1V

150

Ω

resistance

IINSW_LEAKAGE

VIN-switch leakage CTRL = GND, leakage fron VIN to VINSW when pulled to GND

25

nA

IINSW

VIN-switch current

5

36

mA

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