KAI−01150

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10

IMAGING PERFORMANCE

Table 6. TYPICAL OPERATION CONDITIONS

Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.

Description

Condition

Notes

Light Source

Continuous red, green and blue LED illumination

For monochrome sensor, only green LED used.

Operation

Nominal operating voltages and timing

Table 7. SPECIFICATIONS

Description

Symbol

Min.

Nom.

Max.

Units

Sampling

Plan

Temperature

Tested At

(5C)

Notes

Dark Field Global Non−Uniformity

DSNU

−

−

2.0

mVpp

Die

27, 40

Bright Field Global Non−Uniformity

−

2.0

5.0

%rms

Die

27, 40

1

Bright Field Global Peak to Peak

Non−Uniformity

PRNU

−

5.0

15.0

%pp

Die

27, 40

1

Bright Field Center Non−Uniformity

−

1.0

2.0

%rms

Die

27, 40

1

Maximum Photoresponse

Nonlinearity

NL

−

2

−

%

Design

2

Maximum Gain Difference Between

Outputs

DG

−

10

−

%

Design

2

Maximum Signal Error due to

Nonlinearity Differences

DNL

−

1

−

%

Design

2

Horizontal CCD Charge Capacity

HNe

−

55

−

Design

Vertical CCD Charge Capacity

VNe

−

45

−

Design

Photodiode Charge Capacity

PNe

−

20

−

Die

27, 40

3

Horizontal CCD Charge Transfer

Efficiency

HCTE

0.999995

0.999999

−

Die

Vertical CCD Charge Transfer

Efficiency

VCTE

0.999995

0.999999

−

Die

Photodiode Dark Current

Ipd

−

7

70

e/p/s

Die

40

Vertical CCD Dark Current

Ivd

−

140

400

e/p/s

Die

40

Image Lag

Lag

−

−

10

Design

Antiblooming Factor

Xab

300

−

−

Design

Vertical Smear

Smr

−

−100

−

dB

Design

Read Noise

−

12

−

Design

4

Dynamic Range

DR

−

64

−

dB

Design

4, 5

Output Amplifier DC Offset

−

9.4

−

V

Die

27, 40

Output Amplifier Bandwidth

−

250

−

MHz

Die

6

Output Amplifier Impedance

−

127

−

W

Die

27, 40

Output Amplifier Sensitivity

DV/DN

−

34

−

Design

1. Per color

2. Value is over the range of 10% to 90% of photodiode saturation.

3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such

that the photodiode charge capacity is 680 mV.

4. At 40 MHz

6. Assumes 5 pF load.