LC05132C01MT

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4

Continued from preceding page.

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Resistance

ON resistance 1 of

Ron1

VCC=3.1V

Ta=25°C

10.4

13

18.2

m



integrated power MOS FET

I=±2.0A

ON resistance 2 of

Ron2

VCC=3.7V

Ta=25°C

9.6

12

15.6

m



integrated power MOS FET

I=±2.0A

ON resistance 3 of

Ron3

VCC=4.0V

Ta=25°C

9.2

11.6

15

m



integrated power MOS FET

I=±2.0A

ON resistance 4 of

Ron4

VCC=4.5V

Ta=25°C

8.8

11.2

14

m



integrated power MOS FET

I=±2.0A

Internal resistance (VCC-CS)

Rcsu

VCC=Vuv_set

CS=0V

Ta=25°C

300

k



Internal resistance (VSS-CS)

Rcsd

VCC=3.7V

CS=0.1V

Ta=25°C

15

k



Detection and Release delay time

Over-charge detection delay time

Tov

Ta=25°C

0.8

1

1.2

sec

Ta=

30 to 70°C

0.6

1

1.5

Over-charge release delay time

Tovr

Ta=25°C

12.8

16

19.2

ms

Ta=

30 to 70°C

9.6

16

24

Over-discharge detection delay time

Tuv

Ta=25°C

14

20

26

ms

Ta=

30 to 70°C

12

20

30

Over-discharge release delay time

Tuvr

Ta=25°C

0.9

1.1

1.3

ms

Ta=

30 to 70°C

0.6

1.1

1.5

Discharge over-current

detection delay time 1

Toc1

VCC=3.7V

Ta=25°C

9.6

12

14.4

ms

Ta=

30 to 70°C

7.2

12

18

Discharge over-current

release delay time 1

Tocr1

VCC=3.7V

Ta=25°C

3.2

4

4.8

ms

Ta=

30 to 70°C

2.4

4

6

Discharge over-current

detection delay time 2 (Short circuit)

Toc2

VCC=3.7V

Ta=25°C

130

200

320

us

Ta=

30 to 70°C

100

200

350

Charge Over-current

detection delay time

Toch

VCC=3.7V

Ta=25°C

12.8

16

19.2

ms

Ta=

30 to 90°C

9.6

16

24

Charge Over-current

release delay time

Tochr

VCC=3.7V

Ta=25°C

3.2

4

4.8

ms

Ta=-30 to 90°C

2.4

4

6

Reset release time

Tres

VCC=3.7V

Ta=25°C

4

5

6

s

Ta=

30 to 70°C

3

5

7.5

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.