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4H0016 Datasheet(PDF) 10 Page - ON Semiconductor |
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4H0016 Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 23 page KAF-1001 Image Sensor www.truesenseimaging.com Revision 1.1 PS-0033 Pg 10 Imaging Performance TYPICAL OPERATIONAL CONDITIONS All values derived using nominal operating conditions with the recommended timing. Correlated doubling sampling of the output is assumed and recommended. Many units are expressed in electrons: to convert to voltage, multiply by the amplifier sensitivity. SPECIFICATIONS Electro-Optical Description Symbol Min Nom Max Units Notes Verification Plan Optical Fill Factor F F 100 % Photoresponse Non-uniformity PRNU 5 % rms Full Array die 10 Quantum Efficiency (450, 550, 650 nm) QE design 11 CCD Parameters Common to Both Outputs Description Symbol Min Nom Max Units Notes Verification Plan Sat. Signal - Vccd Register Ne - sat 450 500 ke - 2 design 11 Dark Current Jd 15.3 550 30 1080 pA/cm 2 e -/pixel/sec 25 °C (mean of all pixels) die 10 Dark Current Doubling Temp DCDR 5 6 7 °C design 11 Dark Signal Non-uniformity DSNU 1080 e -/pix/sec 4 die 10 Charge Transfer Efficiency CTE .99997 5 die 10 V-H CCD Transfer Time tVH 32 µs 6,7 design 11 Blooming Suppression Bs none CCD Parameters Specific to High Output Amplifier Description Symbol Min Nom Max Units Notes Verification Plan Output Sensitivity Vout/Ne - 9 11 µV/electron design 11 Sat. Signal Ne - sat 180 200 240 ke - 1 design 11 Total Sensor Noise ne - total 13 20 e - rms 8 design 11 Horizontal CCD Frequency: fH 2 5 MHz 6 design 11 Dynamic Range: DR 79 83 dB 9 design 11 CCD Parameters Specific to Low Gain (High Dynamic Range) Output Amplifier Description Symbol Min Nom Max Units Notes Verification Plan Output Sensitivity Vout/Ne - 1.7 2 µV/electron die 10 Sat. Signal Ne - sat 1400 1500 1800 ke - 3 design 11 Total Sensor Noise ne - total 22 30 e - rms 8 die 10 Horizontal CCD Frequency: fH 0.5 2 MHz 6 design 11 Dynamic Range : DR 93 97 dB 9 design 11 |
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