4 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D47.pm5 – Rev. 3/97

©1997, Micron Technology, Inc.

5

4 MEG x 4

EDO DRAM

TECHNOLOGY, INC.

TRUTH TABLE

ADDRESSES

DATA-IN/OUT

FUNCTION

RAS#

CAS#

WE#

OE#

DQ1-DQ4

Standby

H

H

→X

XXXX

High-Z

READ

L

L

H

L

ROW

COL

Data-Out

EARLY WRITE

L

L

L

X

ROW

COL

Data-In

READ WRITE

L

L

H

→LL→H

ROW

COL

Data-Out, Data-In

EDO-PAGE-MODE

1st Cycle

L

H

→L

H

L

ROW

COL

Data-Out

READ

2nd Cycle

L

H

→L

H

L

n/a

COL

Data-Out

EDO-PAGE-MODE

1st Cycle

L

H

→L

L

X

ROW

COL

Data-In

EARLY WRITE

2nd Cycle

L

H

→L

L

X

n/a

COL

Data-In

Any Cycle

L

L

→H

H

L

n/a

n/a

Data-Out

EDO-PAGE-MODE

1st Cycle

L

H

→LH→LL→H

ROW

COL

Data-Out, Data-In

READ-WRITE

2nd Cycle

L

H

→LH→LL→H

n/a

COL

Data-Out, Data-In

HIDDEN

READ

L

→H→L

L

H

L

ROW

COL

Data-Out

REFRESH

WRITE

L

→H→L

L

L

X

ROW

COL

Data-In

RAS#-ONLY REFRESH

L

H

X

X

ROW

n/a

High-Z

CBR REFRESH

H

→L

L

H

X

X

X

High-Z

SELF REFRESH

H

→L

L

H

X

X

X

High-Z