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MT4LC4M4B1DJ-6S Datasheet(PDF) 7 Page - Micron Technology |
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MT4LC4M4B1DJ-6S Datasheet(HTML) 7 Page - Micron Technology |
7 / 20 page 7 4 Meg x 4 FPM DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. D49_5V.p65 – Rev. 5/00 ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)] AC CHARACTERISTICS -5 -6 PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES Refresh period “S” version tREF 128 128 ms 140 RAS# precharge time tRP 30 40 ns RAS# to CAS# precharge time tRPC 5 5 ns RAS# precharge time exiting Self Refresh tRPS 90 105 ns READ command hold time (referenced to RAS#) tRRH 0 0 ns 16 RAS# hold time tRSH 13 15 ns READ-WRITE cycle time tRWC 116 140 ns RAS# to WE# delay time tRWD 67 79 ns 19 WRITE command to RAS# lead time tRWL 13 15 ns Transition time (rise or fall) tT2 50 2 50 ns WRITE command hold time tWCH 8 10 ns WRITE command hold time (referenced to RAS#) tWCR 38 45 ns WE# command setup time tWCS 0 0 ns 18 WRITE command pulse width tWP 5 5 ns WE# hold time (CBR Refresh) tWRH 8 10 ns 4, 23 WE# setup time (CBR Refresh) tWRP 8 10 ns 4, 23 |
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