5

16 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D22_2.p65 – Rev. 5/00

©2000, Micron Technology, Inc.

16 MEG x 4

EDO DRAM

ABSOLUTE MAXIMUM RATINGS*

Voltage on NC, Inputs or I/O Pins

Storage Temperature (plastic) ............ -55°C to +150°C

Power Dissipation ................................................... 1W

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

PARAMETER/CONDITION

SYMBOL

MIN

MAX

UNITS NOTES

SUPPLY VOLTAGE

3

3.6

V

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

V

26

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

-0.3

0.8

V

26

INPUT LEAKAGE CURRENT:

-2

2

µA

27

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

2.4–V

OUTPUT LOW VOLTAGE:

–

0.4

V

OUTPUT LEAKAGE CURRENT:

-5

5

µA

DQ is disabled and in High-Z state