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MT4LC1M16C3DJ-6S Datasheet(PDF) 3 Page - Micron Technology |
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MT4LC1M16C3DJ-6S Datasheet(HTML) 3 Page - Micron Technology |
3 / 22 page 3 1 Meg x 16 FPM DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. D51_5V_B.p65 – Rev. B; Pub 3/01 ©2001, Micron Technology, Inc. 1 MEG x 16 FPM DRAM GENERAL DESCRIPTION (continued) The MT4LC1M16C3 must be refreshed periodically in order to retain stored data. FAST PAGE MODE ACCESS FAST-PAGE-MODE operations allow faster data op- erations (READ, WRITE or READ-MODIFY-WRITE) within a row-address-defined (A0-A9) page boundary. The FAST-PAGE-MODE cycle is always initiated with a row address strobed in by RAS#, followed by a column address strobed in by CAS#. Additional columns may be accessed by providing valid column addresses, strobing CAS# and holding RAS# LOW, thus executing faster memory cycles. Returning RAS# HIGH termi- nates the FAST-PAGE-MODE operation. Returning RAS# and CAS# HIGH terminates a memory cycle and decreases chip current to a reduced standbylevel. The chip is also preconditioned for the next cycle during the RAS# HIGH time. Memory cell data is retained in its correct state by maintaining power and executing anyRAS# cycle (READ, WRITE) or RAS# REFRESH cycle (RAS# ONLY, CBR or HIDDEN) so that all 1,024 combinations of RAS# addresses (A0-A9) are executed at least every 16ms (128ms on the “S” ver- sion), regardless of sequence. The CBR REFRESH cycle will also invoke the refresh counter and controller for row-address control. BYTE ACCESS CYCLE The BYTE WRITEs and BYTE READs are determined by the use of CASL# and CASH#. Enabling CASL# will select a lower byte access (DQ0-DQ7), while enabling CASH# will select an upper byte access (DQ0-DQ15). Enabling both CASL# and CASH# selects a WORD WRITE cycle. The 1 Meg x 16 DRAM may be viewed as two 1 Meg x 8 DRAMs that have common input controls, with the exception of the CAS# inputs. Figure 1 illustrates the BYTE WRITE and WORD WRITE cycles. Figure 2 illus- trates BYTE READ and WORD READ cycles. Figure 1 WORD and BYTE WRITE Example STORED DATA 1 1 0 1 1 1 1 1 RAS# CASL# WE# X = NOT EFFECTIVE (DON'T CARE) ADDRESS 1 ADDRESS 0 0 1 0 1 0 0 0 0 WORD WRITE LOWER BYTE WRITE CASH# INPUT DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 X X X X X X X X INPUT DATA 1 1 0 1 1 1 1 1 INPUT DATA STORED DATA 1 1 0 1 1 1 1 1 INPUT DATA STORED DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 STORED DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 X X X X X X X X 1 0 1 0 1 1 1 1 UPPER BYTE (DQ8-DQ15) OF WORD LOWER BYTE (DQ0-DQ7) OF WORD |
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