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MT28F320J3FS-12 Datasheet(PDF) 10 Page - Micron Technology |
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MT28F320J3FS-12 Datasheet(HTML) 10 Page - Micron Technology |
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10 / 52 page  10 128Mb, 64Mb, 32Mb Q-Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 3 Bus Operations CE0, CE1, STS DEFAULT MODE RP# CE21 OE#2 WE#2 ADDRESS VPEN DQ 3 MODE NOTES Read Array VIH Enabled VIL VIH XX DOUT High-Z4 5, 6, 7 Output Disable VIH Enabled VIH VIH X X High-Z X Standby VIH Disabled X X X X High-Z X Reset/Power-Down VIL X X X X X High-Z High-Z4 Mode Read Identifier Codes VIH Enabled VIL VIH See X Note 8 High-Z4 Figure 2 Read Query VIH Enabled VIL VIH See X Note 9 High-Z4 Table 7 Read Status (ISM off) VIH Enabled VIL VIH XX DOUT Read Status (ISM on) VIH Enabled VIL VIH XX DQ7 DOUT DQ15–DQ8 High-Z DQ6–DQ0 High-Z Write VIH Enabled VIH VIL XVPENH DIN X 7, 10, 11 NOTE: 1. See Table 2 for valid CE configurations. 2. OE# and WE# should never be enabled simultaneously. 3. DQ refers to DQ0–DQ7 if BYTE# is LOW and DQ0–DQ15 if BYTE# is HIGH. 4. High-Z is VOH with an external pull-up resistor. 5. Refer to DC Characteristics. When VPEN ≤ VPENLK, memory contents can be read, but not altered. 6. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN. See DC Characteristics for VPENLK and VPENH voltages. 7. In default mode, STS is VOL when the ISM is executing internal block erase, program, or lock bit configuration algorithms. It is VOH when the ISM is not busy, in block erase suspend mode (with programming inactive), program suspend mode, or reset/power-down mode. 8. See Read Identifier Codes section for read identifier code data. 9. See Read Query Mode Command section for read query data. 10. Command writes involving block erase, program, or lock bit configuration are reliably executed when VPEN = VPENH and VCC is within specification. 11. Refer to Table 4 for valid DIN during a WRITE operation. |
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