MT28S4M16LC datasheet(11/48 Pages) MICRON

Part #	MT28S4M16LC

Description	SYNCFLASH MEMORY

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Manufacturer	MICRON [Micron Technology]

Direct Link	http://www.micron.com

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COMMANDS

Truth Table 2 provides a quick reference of available commands

for flash memory interface operation. A written description of each

command is found in the Flash Memory Functional Description sec-

tion.

TRUTH TABLE 2

FLASH MEMORY COMMAND SEQUENCES

(Notes: 1, 2, 3, 4, 5; see notes on the next page.)

FIRST CYCLE

SECOND CYCLE

THIRD CYCLE

BANK

OPERATION

CMD

ADDR6 ADDR

DQ

RP#

CMD7

ADDR ADDR

DQ

RP#

CMD

ADDR ADDR

DQ8

RP#

NOTES

READ DEVICE CONFIGURATION

LCR

90h

Bank

X

H

ACTIVE

Row

Bank

X

H

READ

CA

Bank

X

H

9, 10

READ STATUS REGISTER

LCR

70h

X

H

ACTIVE

X

H

READ

X

H

CLEAR STATUS REGISTER

LCR

50h

X

H

ERASE SETUP/CONFIRM

LCR

20h

Bank

X

H

ACTIVE

Row

Bank

X

H

WRITE

X

Bank

D0h

H/VHH 11, 12, 13

PROGRAM SETUP/PROGRAM

LCR

40h

Bank

X

H

ACTIVE

Row

Bank

X

H

WRITE

Col

Bank

DIN

H/VHH 11, 12, 13

PROTECT BLOCK/CONFIRM

LCR

60h

Bank

X

H

ACTIVE

Row

Bank

X

H

WRITE

X

Bank

01h

H/VHH

11, 12,

13, 14

PROTECT DEVICE/CONFIRM

LCR

60h

Bank

X

H

ACTIVE

X

Bank

X

H

WRITE

X

Bank

F1h

VHH

11, 12

UNPROTECT BLOCKS/CONFIRM

LCR

60h

Bank

X

H

ACTIVE

X

Bank

X

H

WRITE

X

Bank

D0h

H/VHH

11, 12,

13, 15

ERASE NVMODE REGISTER

LCR

30h

Bank

X

H

ACTIVE

X

Bank

X

H

WRITE

X

Bank

C0h

H

11, 12

PROGRAM NVMODE REGISTER

LCR

A0h

Bank

X

H

ACTIVE

X

Bank

X

H

WRITE

X

Bank

X

H

11, 12

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