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MT28F400B3VG-8B Datasheet(PDF) 4 Page - Micron Technology |
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MT28F400B3VG-8B Datasheet(HTML) 4 Page - Micron Technology |
4 / 30 page 4 4Mb Smart 3 Boot Block Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. F45_3.p65 – Rev. 3, Pub. 12/01 ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS SYMBOL TYPE DESCRIPTION 43 9 11 WE# Input Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command execution logic (CEL) or to the memory array. 2 12 14 WP# Input Write Protect: Unlocks the boot block when HIGH if VPP = VPPH1 (3.3V) or VPPH2 (5V) and RP# = VIH during a WRITE or ERASE. Does not affect WRITE or ERASE operation on other blocks. 12 22 26 CE# Input Chip Enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and goes into standby power mode. 44 10 12 RP# Input Reset/Power-Down: When LOW, RP# clears the status register, sets the internal state machine (ISM) to the array read mode and places the device in deep power- down mode. All inputs, including CE#, are “Don’t Care,” and all outputs are High-Z. RP# unlocks the boot block and overrides the condition of WP# when at VHH (12V), and must be held at VIH during all other modes of operation. 14 24 28 OE# Input Output Enable: Enables data output buffers when LOW. When OE# is HIGH, the output buffers are disabled. 33 – 47 BYTE# Input Byte Enable: If BYTE# = HIGH, the upper byte is active through DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are High-Z, and all data is accessed through DQ0–DQ7. DQ15/(A-1) becomes the least significant address input. 11, 10, 9, 8, 21, 20, 19, 25, 24, 23, A0–A17/ Input Address Inputs: Select a unique, 16-bit word or 8-bit 7, 6, 5, 4, 18, 17, 16, 22, 21, 20, (A18) byte. The DQ15/(A-1) input becomes the lowest order 42, 41, 40, 15, 14, 8, 7, 19, 18, 8, 7, address when BYTE# = LOW (MT28F400B3) to allow for 39, 38, 37, 36, 6, 5, 4, 3, 6, 5, 4, 3, 2, a selection of an 8-bit byte from the 524,288 available. 36, 35, 34, 3 2, 1, 40, 13 1, 48, 17 31 – 45 DQ15/ Input/ Data I/O: MSB of data when BYTE# = HIGH. Address (A-1) Output Input: LSB of address input when BYTE# = LOW during READ or WRITE operation. 15, 17, 19, 25-28, 32-35 29, 31, 33, DQ0–DQ7 Input/ Data I/Os: Data output pins during any READ operation 21, 24, 26, 35, 38, 40, Output or data input pins during a WRITE. These pins are used 28, 30 42, 44 to inputcommands to the CEL. 16, 18, 20, – 30, 32, 34, DQ8–DQ14 Input/ Data I/Os: Data output pins during any READ operation 22, 25, 27, 36, 39, 41, Output or data input pins during a WRITE when BYTE# = HIGH. 29 43 These pins are High-Z when BYTE# is LOW. 111 13 VPP Supply Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until completion of the WRITE or ERASE, VPP must be at VPPH1 (3.3V) or VPPH2 (5V). VPP = “Don’t Care” during all other operations. 23 30, 31 37 VCC Supply Power Supply: +3.3V ±0.3V. 13, 32 23, 39 27, 46 VSS Supply Ground. – 29, 37, 38 9, 10, 15, 16 NC – No Connect: These pins may be driven or left unconnected. |
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