Document Number: 91292

www.vishay.com

S11-0517-Rev. B, 21-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFZ44R, SiHFZ44R

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for

Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing

techniques

to

achieve

extremely

low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Current limited by the package, (die current = 51 A).

PRODUCT SUMMARY

60

0.028

67

18

25

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRFZ44RPbF

SiHFZ44R-E3

SnPb

IRFZ44R

SiHFZ44R

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

50

A

Continuous Drain Current

36

200

Linear Derating Factor

1.0

W/°C

100

mJ

Maximum Power Dissipation

150

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

for 10 s

300

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply