HX313C9FB-4 datasheet(1/2 Pages) ETC2

Part #	HX313C9FB-4

Description	4GB 512M x 64-Bit DDR3-1333

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DESCRIPTION

HyperX HX313C9FB/4 is a 512M x 64-bit (4GB) DDR3-1333

CL9 SDRAM (Synchronous DRAM) 1Rx8 memory module,

based on eight 512M x 8-bit DDR3 FBGA components. This

module has been tested to run at DDR3-1333 at latency timing

9-9-9 at 1.5V. The JEDEC standard electrical and mechanical

specifications are as follows:

Document No. 4806990-001.B00

04/23/15

Page 1

SPECIFICATIONS

s

e

l

c

y

c

9

)

D

I

(

L

C

Row Cycle Time (tRCmin)

49.125ns (min.)

Refresh to Active/Refresh

260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

36ns (min.)

Maximum Operating Power

TBD W*

0

-

V

4

9

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i

t

a

R

L

U

Operating Temperature

0o C to 85o C

Storage Temperature

-55o C to +100o C

*Power will vary depending on the SDRAM used.

FEATURES

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• Height 1.291” (32.80mm) w/heatsink, single sided

component

HX313C9FB/4

4GB 512M x 64-Bit DDR3-1333

CL9 240-Pin DIMM

Continued >>

kingston.com/hyperx

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