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SIE832DF Datasheet(PDF) 4 Page - Vishay Telefunken |
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SIE832DF Datasheet(HTML) 4 Page - Vishay Telefunken |
4 / 10 page www.vishay.com 4 Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 Vishay Siliconix SiE832DF TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Source-to-Drain Voltage (V) 1 10 100 TJ = 25 °C TJ = 150 °C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 246 8 10 ID = 14 A VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0.006 0.004 0.002 0.008 0.010 0.012 0 30 50 10 20 Time (s) 40 10 1000 1 0.1 0.01 100 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 1 ms 10 ms 100 ms DC 1 s 10 s 0.1110 10 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited |
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