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BGA7L1N6 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BGA7L1N6 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 22 page BGA7L1N6 Features Data Sheet 8 Revision 3.1 (Min/Max), 2014-02-11 Description The BGA7L1N6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 728 MHz to 960 MHz. The LNA provides 13.3 dB gain and 0.90 dB noise figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA7L1N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control |
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