SIS822DNT datasheet(1/8 Pages) TFUNK

Part #	SIS822DNT

Description	N-Channel 30 V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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SiS822DNT

www.vishay.com

Vishay Siliconix

S14-1340-Rev. A, 30-Jun-14

1

Document Number: 62965

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

Ordering Information:

SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

• Thin 0.8 mm profile

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Notebook PC

- System power

- Load switch

• Synchronous buck high-side

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 81 °C/W.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) MAX.

ID (A) a

Qg (TYP.)

30

0.024 at VGS = 10 V

12

3.8 nC

0.030 at VGS = 4.5 V

12

Thin PowerPAK® 1212-8 Single

Bottom View

1

S

2

S

3

S

D

7

D

6

D

5

D

8

4

G

Top View

1

3.3

mm

3.3

mm

0.8 mm

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

12 a

A

TC = 70 °C

12 a

TA = 25 °C

8.7 b, c

TA = 70 °C

7 b, c

Pulsed Drain Current (t = 100 μs)

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

12 a

TA = 25 °C

2.7 b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Single Pulse Avalanche Energy

EAS

1.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

15.6

W

TC = 70 °C

10

TA = 25 °C

3.2 b, c

TA = 70 °C

2 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient b, d

t

≤ 10 s

RthJA

32

39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

6.5

8

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