Electronic Components Datasheet Search |
|
SI4830CDY Datasheet(PDF) 9 Page - Vishay Telefunken |
|
SI4830CDY Datasheet(HTML) 9 Page - Vishay Telefunken |
9 / 15 page Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 9 Vishay Siliconix Si4830CDY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C 0 25 50 75 100 125 150 10-2 TJ -Junction Temperature (°C) 10-4 10-3 10-5 10-6 30 V 10 V 20 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 8 A 0 12 24 36 48 60 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s BVDSS Limited |
Similar Part No. - SI4830CDY |
|
Similar Description - SI4830CDY |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |