IKB06N60T datasheet(8/13 Pages) INFINEON

Part #	IKB06N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKB06N60T

TRENCHSTOP

™ Series

p

IFAG IPC TD VLS

8

Rev. 2.5 20.09.2013

0 n C

1 0 n C

2 0 n C

3 0 n C

4 0 n C

5 0 n C

0 V

5 V

1 0 V

1 5 V

4 8 0 V

1 2 0 V

0V

10V

20V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC = 6 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

12V

14V

16V

18V

0A

20A

40A

60A

80A

1 0V

11V

1 2V

13V

1 4V

0µs

2µs

4µs

6µs

8µs

1 0µs

1 2µs

VGE, GATE-EMITTETR VOLTAGE

VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

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IKB06N60T Datasheet(PDF) 8 Page - Infineon Technologies AG

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