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IDP08E65D1 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # IDP08E65D1
Description  Temperature stable behaviour of key parameters
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDP08E65D1 Datasheet(HTML) 5 Page - Infineon Technologies AG

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IDP08E65D1
EmitterControlledDiodeRapid1Series
Rev.2.2,2013-12-16
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
51
-
ns
Diode reverse recovery charge
Qrr
-
0.20
-
µC
Diode peak reverse recovery current
Irrm
-
7.9
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-420
-
A/µs
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs
Diode reverse recovery time
trr
-
80
-
ns
Diode reverse recovery charge
Qrr
-
0.17
-
µC
Diode peak reverse recovery current
Irrm
-
2.8
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-310
-
A/µs
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
-
81
-
ns
Diode reverse recovery charge
Qrr
-
0.49
-
µC
Diode peak reverse recovery current
Irrm
-
10.5
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-300
-
A/µs
Tvj=175°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs
Diode reverse recovery time
trr
-
110
-
ns
Diode reverse recovery charge
Qrr
-
0.32
-
µC
Diode peak reverse recovery current
Irrm
-
4.7
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-210
-
A/µs
Tvj=125°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs


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