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IDP08E65D1 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IDP08E65D1 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 11 page 4 IDP08E65D1 EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 16.0 8.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 24.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM 64.0 A PowerdissipationTC=25°C Ptot 56.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic Diode thermal resistance, 1) junction - case Rth(j-c) 2.69 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Diode forward voltage VF IF=8.0A Tvj=25°C Tvj=125°C Tvj=175°C - - - 1.35 1.30 1.26 1.70 - - V Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C - - - - 40.0 2000.0 µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7.0 - nH 1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. |
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