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MGBR10S30G-T27-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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MGBR10S30G-T27-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page MGBR10S30 Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R601-242.a ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage (Note 1) VRM 30 V Working Peak Reverse Voltage VRWM 30 V Peak Repetitive Reverse Voltage VRRM 30 V RMS Reverse Voltage VR(RMS) 21 V Average Rectified Output Current TC=125°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 175 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 73 °C/W Junction to Case θJC 13 °C/W ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.50mA 30 V Forward Voltage Drop VFM IF=10A, TC=25°C 0.43 V IF=10A, TC=125°C 0.38 V Peak Reverse Current at Rated DC Blocking Voltage (Note 1) IRM VR=30V, TC=25°C 500 μA VR=30V, TC=125°C 50 mA Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. 3. Mounted on an FR4 PCB, single-sided copper, with 100cm 2 copper pad area. |
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