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TPS53125 Datasheet(PDF) 9 Page - Texas Instruments |
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TPS53125 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 33 page Control Logic On/Off time Minimun On/Off OVP/UVP, Discharge Control XCON OCP ERR COMP OV UV ENx VOx PGNDx LLx VOx Fault Sdn V50K VBSTx DRVHx SWx VREG5 VREG5 DRVLx PGNDx V5FILT GND Ref VFBx TRIPx –30% +15% SSx GND IصA LL PGNDx 1 Shot TPS53125 www.ti.com SLVS947C – OCTOBER 2009 – REVISED AUGUST 2014 Functional Block Diagrams (continued) 8.3 Feature Description 8.3.1 PWM Operation The main control loop of the TPS53125 is an adaptive on-time pulse width modulation (PWM) controller using a proprietary D-CAP2™ mode control. D-CAP2™ mode control combines constant on-time control with an internal compensation circuit for pseudo-fixed frequency and low external component count configuration with both low ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output. At the beginning of each cycle, the synchronous high-side MOSFET is turned on. After an internal one-shot timer expires, this MOSFET is turned off. When the feedback voltage falls below the reference voltage, the one-shot timer is reset and the high-side MOSFET is turned back on. The one shot is set by the converter input voltage VIN, and the output voltage VO, to maintain a pseudo-fixed frequency over the input voltage range. An internal ramp is added to the reference voltage to simulate output ripple, eliminating the need for ESR induced output ripple from D-CAP mode control. 8.3.2 Drivers Each channel of the TPS53125 contains two high-current resistive MOSFET gate drivers. The low-side driver is a PGND referenced, VREG5 powered driver designed to drive the gate of a high-current, low RDS(ON) N-channel MOSFET whose source is connected to PGND. The high-side driver is a floating SWx referenced VBST powered driver designed to drive the gate of a high-current, low RDS(ON) N-channel MOSFET. To maintain the VBST voltage during the high-side driver ON time, a capacitor is placed from SWx to VBSTx. Each driver draws average current equal to gate charge (Qg at Vgs = 5 V) times switching frequency (fSW). Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 9 |
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