IPD180N10N3G_14 datasheet(1/9 Pages) INFINEON

Part #	IPD180N10N3G

Description	N-channel, normal level

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD180N10N3 G

OptiMOSTM3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

DS(on) product (FOM)

• Very low on-resistance R

DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

2)

43

A

T C=100 °C

30

Pulsed drain current

2)

I D,pulse

T C=25 °C

172

Avalanche energy, single pulse

E AS

I D=33 A, R GS=25 W

50

mJ

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

71

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

1)J-STD20 and JESD22

2) See figure 3

V

DS

100

V

R

DS(on),max TO-263

18

m

W

I

D

43

A

Product Summary

Type

IPD180N10N3 G

Package

PG-TO252-3

Marking

180N10N

Rev. 2.3

page 1

2014-05-19

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